Ordering number:ENN6523
NPN Epitaxial Planar Silicon
Transistor
EC3H02B
VHF to UHF Low-Noise Wide-Band Amplifier Applications
Features
· Low noise : NF=1.
0dB typ (f=1GHz).
· High gain : S21e2=12dB typ (f=1GHz).
· High cutoff frequency : fT=7GHz typ.
· Ultrasmall (1006size), slim (0.
5mm) leadless package.
Package Dimensions
unit:mm 2183
[EC3H02B]
0.
35 0.
2 0.
15 0.
05 1
0.
4
0.
15 2
0.
05 1.
0
0.
65
0.
25
3 0.
5
0.
25
0.
05
0.
05
(Bottom view)
0.
6
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC...