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EC3H02C

Sanyo Semicon Device
Part Number EC3H02C
Manufacturer Sanyo Semicon Device
Description VHF to UHF Wide-Band Low-Noise Amplifier Applications
Published Apr 1, 2005
Detailed Description Ordering number : ENN6579 EC3H02C NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Ampli...
Datasheet PDF File EC3H02C PDF File

EC3H02C
EC3H02C

Overview
Ordering number : ENN6579 EC3H02C NPN Epitaxial Planar Silicon Transistor EC3H02C VHF to UHF Wide-Band Low-Noise Amplifier Applications Features • • • • Package Dimensions unit : mm 2184 [EC3H02C] 0.
5 0.
3 0.
05 0.
6 0.
2 0.
05 0.
2 Low noise : NF=1.
0dB typ (f=1GHz).
High gain :S21e2=12dB typ (f=1GHz).
High cutoff frequency : fT=7GHz typ.
Ultraminiature (1008 size) and thin (0.
6mm) leadless package .
3 0.
05 4 1.
0 2 1 0.
3 0.
05 (Bottom View) 1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4 0.
8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Conditions Ratings 20 10 2 70 100 150 --55 to +150 Unit V V V mA mW °C °C Electrical Characteristics at Ta=25°C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwitch Product Output C...


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