Ordering number : ENN6579
EC3H02C
NPN Epitaxial Planar Silicon
Transistor
EC3H02C
VHF to UHF Wide-Band Low-Noise Amplifier Applications
Features
• • • •
Package Dimensions
unit : mm 2184
[EC3H02C]
0.
5 0.
3 0.
05 0.
6 0.
2 0.
05 0.
2
Low noise : NF=1.
0dB typ (f=1GHz).
High gain :S21e2=12dB typ (f=1GHz).
High cutoff frequency : fT=7GHz typ.
Ultraminiature (1008 size) and thin (0.
6mm) leadless package .
3
0.
05
4
1.
0
2
1
0.
3 0.
05
(Bottom View)
1 : Base 2 : Emitter 3 : Collector 4 : Collector SANYO : E-CSP1008-4
0.
8
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipa...