Part Number
|
4AK15 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N-Channel Power MOS FET Array |
Published
|
Apr 1, 2005 |
Detailed Description
|
4AK15
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(o...
|
Datasheet
|
4AK15
|
Overview
4AK15
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance R DS(on) ≤ 0.
07 , VGS = 10 V, I D = 8 A R DS(on) ≤ 0.
095 , VGS = 4 V, I D = 8 A • Capable of 4 V gate drive • Low drive current • High speed switching • High density mounting • Suitable for motor driver, solenoid driver and lamp driver
4AK15
Outline
SP-10
3 D 4 G 2G
5 D 6 G
7 D 8 G
9 D
12 34 56 78 9 10
1S
S 10
1, 10.
Source 2, 4, 6, 8.
Gate 3, 5, 7, 9.
Drain
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation C...
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