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4AK25

Part Number	4AK25
Manufacturer	Hitachi Semiconductor
Description	Silicon N-Channel Power MOS FET Array
Published	Apr 1, 2005
Detailed Description	4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(o...
Datasheet	4AK25 PDF File

Overview

4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.
45 , VGS = 10 V, I D = 1 A • Low drive current • High speed switching • High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10.
Source 2, 4, 6, 8.
Gate 3, 5, 7, 9.
Drain 4AK25 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
4 Devices operation Symbol VDSS VGSS ID I D(pulse)* I DR Pch...

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