Silicon N-Channel Power MOS FET Array
4AK25 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS(on) 0.45 , VGS = 10 V, I D = 1 A • Low drive current • High speed switching • High density mounting Outline SP-10 3 D 4 G 2G 5 D 6 G 7 D 8 G 9 D 12 34 56 78 9 10 1S S 10 1, 10. Source 2, 4, 6, 8. Gate 3, 5, 7, 9. Drain 4AK25 Absol...
Hitachi Semiconductor