|
Part Number
|
4AM11 |
|
Manufacturer
|
Hitachi Semiconductor |
|
Description
|
Silicon N-Channel/P-Channel Power MOS FET Array |
|
Published
|
Apr 1, 2005 |
|
Datasheet
|
4AM11
|
Features
• Low on-resistance N-channel: RDS(on) ≤ 0.17 Ω, VGS = 10 V, ID = 2.5 A P-channel: RDS(on) ≤ 0.2 Ω, VGS = –10 V, ID = –2.5 A
•
•
•
•
• Capable of 4 V gate drive Low drive current High speed switching High density mounting Suitable for H-bridged motor...
Similar Datasheet