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4AM17

Hitachi Semiconductor
Part Number 4AM17
Manufacturer Hitachi Semiconductor
Description Silicon N/P-Channel/P-Channel Power MOS FET Array
Published Nov 12, 2010
Detailed Description 4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 (Z) 1st. Edition February 1999 Features • Low ...
Datasheet PDF File 4AM17 PDF File

4AM17
4AM17

Overview
4AM17 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-729 (Z) 1st.
Edition February 1999 Features • Low on-resistance N Channel: R DS(on) ≤0.
17 Ω, VGS = 10 V, ID = 4 A P Channel : R DS(on) ≤ 0.
2 Ω, VGS = –10 V, ID = –4 A • 4 V gate drive devices.
• High density mounting Outline SP-12 12 1 G 2 D 5 G 4 D 8 G 9 D 12 G 11 D 34 56 78 910 1112 S 3 S 6 S 7 S 10 1, 5, 8, 12.
Gate 2, 4, 9, 11.
Drain 3, 6, 7, 10.
Source www.
DataSheet.
in 4AM17 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel dissipation Channel tempe...


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