High hFE LOW VCE (sat)
Silicon
NPN Triple Diffused Planar
Transistor sAbsolute maximum ratings (Ta=25°C)
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4495 80 50 6 3 1 25(Tc=25°C) 150 –55 to +150 Unit V V V A A W °C °C
2SC4495
Application : Audio Temperature Compensation and General Purpose
(Ta=25°C) 2SC4495 10max 10max 50min 500min 0.
5max 40typ 30typ V MHz pF
13.
0min
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=0.
5A IC=1A, IB=20mA VCE=12V, IE=–0.
1A VCB=10V,f=1MHz
External Dimensions FM20(TO220F)
4.
0±0.
2 10.
1±0.
2 4.
2±0.
2 2.
8 c0.
5
Unit
µA
V
16.
9±0.
3 8.
4±0.
2
µA
1.
35±0.
15 1.
35±0.
15 0.
85 +0.
2 -0.
1 0.
45 +0.
2 -0.
1 2.
54 2.
...