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2SC4408

Toshiba Semiconductor
Part Number 2SC4408
Manufacturer Toshiba Semiconductor
Description Silicon NPN Transistor
Published Mar 22, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4408 Power Amplifier Applications Power Switching Applica...
Datasheet PDF File 2SC4408 PDF File

2SC4408
2SC4408


Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4408 Power Amplifier Applications Power Switching Applications 2SC4408 Unit: mm • Low saturation voltage: VCE (sat) = 0.
5 V (max) (IC = 1 A) • High collector power dissipation: PC = 900 mW • High-speed switching: tstg = 500 ns (typ.
) • Complementary to 2SA1680 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 80 50 6 2 0.
2 900 150 −55 to 150 V V V A A mW °C °C JEDEC JEITA TOSHIBA TO-92MOD ― 2-5J1A Note: Using continuously under heavy loads (e.
g.
the application of high Weight: 0.
36 g (typ.
) temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
1 2006-11-10 Electrical Characteristics (Ta = 25°C) 2SC4408 Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob VCB = 80 V, IE = 0 VEB = 6 V, IC = 0 IC = 10 mA, IB = 0 VCE = 2 V, IC = 100 mA VCE = 2 V, IC = 1.
5 A IC = 1 A, IB = 0.
05 A IC = 1 A, IB = 0.
05 A VCE = 2 V, IC = 100 mA VCB = 10 V, IC = 0, f = 1 MHz Min Typ.
Max Unit ― ― 1.
0 μA ― ― 1.
0 μA 50 ― ― V 120 ― 400 40 ― ― ― ―...


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