Power
Transistors
2SC4638
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
4.
2±0.
2
16.
7±0.
3 7.
5±0.
2 0.
7±0.
1
■ Features
10.
0±0.
2 5.
5±0.
2
4.
2±0.
2 2.
7±0.
2
• High-speed switching
• High collector-base voltage (Emitter open) VCBO
φ 3.
1±0.
1
• Low collector-emitter saturation voltage VCE(sat)
• Full-pack package which can be installed to the heat sink with one screw
■ Absolute Maximum Ratings TC = 25°C
1.
4±0.
1
1.
3±0.
2
/ Parameter
Symbol Rating
Unit
14.
0±0.
5 Solder Dip
(4.
0)
0.
8±0.
1
0.
5+–00.
.
12
Collector-base voltage (Emitter open) VCBO
800
V
e ) Collector-emitter voltage (E-B short) VCES
800
V
c type Collector-emitter volt...