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2SC4600

Kexin
Part Number 2SC4600
Manufacturer Kexin
Description NPN Triple Diffused Planar Silicon Transistor
Published Oct 30, 2013
Detailed Description SMD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4600 TO-263 + 0 .1 1 .2 7 -0 .1 Unit: mm +0.1 ...
Datasheet PDF File 2SC4600 PDF File

2SC4600
2SC4600

Overview
SMD Type Transistors NPN Triple Diffused Planar Silicon Transistor 2SC4600 TO-263 + 0 .
1 1 .
2 7 -0 .
1 Unit: mm +0.
1 1.
27-0.
1 +0.
2 4.
57-0.
2 Features Surface mount type device making the following possible.
Reduction in the number of manufacturing processes Small size of 2SC4600-applied equipment.
High breakdown voltage, high reliability.
Fast switching speed.
Wide ASO.
Adoption of MBIT process.
+0.
1 1.
27-0.
1 0.
1max +0.
1 0.
81-0.
1 + 0 .
2 5 .
2 8 -0 .
2 2.
54 5.
08 +0.
1 -0.
1 + 0 .
2 2 .
5 4 -0 .
2 + 0 .
2 1 5 .
2 5 -0 .
2 High density surface mount applications.
+ 0 .
2 8 .
7 -0 .
2 +0.
2 2.
54-0.
2 +0.
2 0.
4-0.
2 Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current ( DC) Collector current (Pulse) * Base current Collector power dissipation Ta = 25 TC = 25 Junction temperature Storage temperature range * PW 300ms, duty cycle 10% Tj Tstg Symbol VCBO VCEO VEBO IC ICP IB PC Rating 800 500 7 5 10 2 1.
65 50 150 -55 to +150 A W Unit V V V A 5 .
6 0 for 2SC4600-applied equipment.
1,Base 2,Collector 3,Emitter www.
kexin.
com.
cn 1 Free Datasheet http://www.
datasheet4u.
com/ SMD Type 2SC4600 Electrical Characteristics Ta = 25 Parameter Collector cut-off current Emitter cut-off current DC current gain Gain-Bandwidth product Output Capacitance Collector-emitter saturation voltage Base-emitter saturation voltage Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON time Storage time Fall time Symbol ICBO IEBO hFE fT Cob VCE (sat) VBE (sat) V (BR) CBO V (BR) CEO V(BR)EBO VCEO(SUS) VCEX(SUS) ton tstg tf IC=4A,IB1=0.
8A,IB2=-1.
6A,RL=50 Ù,VCC=200V Testconditons VCB = 500 V, IE = 0 VEB = 5 V, IC = 0 VCE = 5 V, IC = 0.
6A VCE = 5 V, IC = 3A VCE = 10 V, IC =0.
6A VCB=10V,f=1MHz IC = 3 A, IB = 0.
6 A IC =3 A, IB = 0.
6 A IC = 1 mA, IE = 0 IC = 5 mA,RBE= IE=1mA,IC=0 IC=5A,IB1=1A,L=50ìH IC=2.
5A,IB1=-IB2=1A,L=1mH 800 500 7 500 5...


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