Ordering number:ENN5884A
NPN Triple Diffused Planar Silicon
Transistor
2SC5305LS
Inverter Lighting Applications
Features
· High breakdown voltage (VCBO=1200V).
· High reliability (Adoption of HVP process).
· Adoption of MBIT process.
Package Dimensions
unit:mm 2079D
[2SC5305]
10.
0 3.
2
3.
5 7.
2
4.
5
2.
8
16.
1
16.
0
3.
6
0.
9
1.
2
14.
0
1.
2
0.
75 1 2 3
0.
7
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
1:Base 2:Collector 3:Emitter SANYO:TO-22...