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2SC5305

UTC
Part Number 2SC5305
Manufacturer UTC
Description HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR
Published Apr 13, 2007
Detailed Description UNISONIC TECHNOLOGIES CO., LTD 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANS...
Datasheet PDF File 2SC5305 PDF File

2SC5305
2SC5305

Overview
UNISONIC TECHNOLOGIES CO.
, LTD 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE HIGH SPEED POWER SWITCHING TRANSISTOR  FEATURES * High Hfe For Low Base Drive Requirement * Suitable For Half Bridge Light Ballast Applications * Built-In Free-Wheeling Diode Makes It Specially Suitable For Light Ballast Applications * Well Controlled Storage-Time Spread For All Range Of Hfe  ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2SC5305L-TA3-T 2SC5305G-TA3-T TO-220 2SC5305L-TF3-T 2SC5305G-TF3-T TO-220F Note: Pin Assignment: B: Base E: Emitter C: Collector Pin Assignment 123 BCE BCE Packing Tube Tube  MARKING www.
unisonic.
com.
tw Copyright © 2017 Unisonic Technologies Co.
, Ltd 1 of 5 QW-R203-028.
B 2SC5305 NPN EPITAXIAL SILICON TRANSISTOR  ABSOLUTE MAXIMUM RATING (TC=25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Collector Base Voltage Collector Emitter Voltage VCBO VCEO 800 400 V V Emitter Base Voltage Collector Current (DC) VEBO IC 12 5 V A Collector Current (Pulse)* Base Current (DC) ICP 10 A IB 2 A Base Current (Pulse)* Power Dissipation IBP 4 A PC 75 W Junction Temperature TJ +150 °C Storage Temperature TSTG -65 ~ +150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
 THERMAL DATA (TC=25°C, unless otherwise specified) PARAMETER Junction to Ambient Junction to Case TO-220 TO-220F SYMBOL θJA θJC RATINGS 62.
5 1.
65 3.
12 UNIT °С/W °С/W °С/W  ELECTRICAL CHARACTERISTICS (TC=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage BVCBO BVCEO IC = 1mA, IE = 0 IC = 5mA, IB = 0 Emitter Cut-off Current Collector Cut-off Current BVEBO ICBO IE=1mA, IC=0 VCB=500V, IE=0 Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Ba...


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