PRELIMINARY DATA SHEET
SILICON
TRANSISTOR
2SC5408
NPN EPITAXIAL SILICON
TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION
FEATURE
• High fT 17 GHz TYP.
• High gain |S21e|2 = 15.
5 dB TYP.
@f = 2 GHz, VCE = 2 V, IC = 7 mA • NF = 1.
1 dB, @f = 2 GHz VCE = 2 V, IC = 1 mA • 6-pin Small Mini Mold Package
PACKAGE DIMENSIONS (in mm)
2.
1±0.
1 1.
25±0.
1 0.
2 +0.
1 –0 0.
15 +0.
1 –0
1.
3 0.
65 0.
65
2.
0±0.
2
E
ORDERING INFORMATION
PART NUMBER 2SC5408-T1 QUANTITY 3 kpcs/reel PACKING STYLE 8-mm wide emboss taping, 6-pin (collector) feed hole direction
0.
9±0.
1
B
0.
7
Remark To order evaluation samples, consult your NEC sales personnel (supported in 50-pcs units).
ABSOLUTE MAXIMUM RATINGS
PIN CONNECTIONS
P...