Ordering number:ENN5911
NPN Epitaxial Planar Silicon
Transistor
2SC5415
High-Frequency Low-Noise Amplifier Applications
Features
· High gain : S21e =9dB typ (f=1GHz).
· High cutoff frequency : fT=6.
7GHz typ.
2
Package Dimensions
unit:mm 2038A
[2SC5415]
4.
5 1.
6 1.
5
0.
5 3 1.
5 2 3.
0 0.
75 1
1.
0
0.
4
2.
5 4.
25max
0.
4
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Mounted on a ceramic board (250mm2× 0.
8mm) Conditions
1 : Base 2 : Collector 3 : Emitter SANYO : PCP (Bottom view)
Ra...