Transistors
2SC5419
Silicon
NPN triple diffusion planar type
For low-frequency output amplification
6.
9±0.
1 0.
7 4.
0
Unit: mm
2.
5±0.
1 (0.
8)
(0.
5)
(1.
0) (0.
2)
4.
5±0.
1
■ Features
• High collector-emitter voltage (Base open) VCEO
• High transition frequency fT
0.
65 max.
(1.
0) 14.
5±0.
5
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
/ Parameter
Symbol Rating
Unit
e Collector-base voltage (Emitter open) VCBO
300
V
pe) Collector-emitter voltage (Base open) VCEO
300
V
nc d ge.
ed ty Emitter-base voltage (Collector open) VEBO
7
V
sta tinu Collector current
IC
70
mA
a e cle con Peak collector current
lifecy d, dis Collector power dissipation *...