PRELIMINARY DATA SHEET
SILICON
TRANSISTOR
2SC5433
NPN EPITAXIAL SILICON
TRANSISTOR FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
FEATURE
• Ultra super mini-mold thin flat package (1.
4 mm × 0.
8 mm × 0.
59 mm: TYP.
) • Contains same chip as 2SC5007
PACKAGE DIMENSIONS (in mm)
1.
4 ± 0.
05 0.
8 ± 0.
1
1.
4 ± 0.
1 (0.
9) 0.
45 0.
45
0.
2 +0.
1 –0
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature SYMBOL VCBO VCEO VEBO IC PT Tj Tstg RATING 20 10 1.
5 65 125 150 –65 to +150 UNIT V V
TE
3
1
mW °C °C
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER...