Power
Transistors
2SC5457
Silicon
NPN triple diffusion planar type
For high breakdown voltage high-speed switching
6.
5±0.
1 5.
3±0.
1 4.
35±0.
1
Unit: mm
2.
3±0.
1 0.
5±0.
1
7.
3±0.
1 1.
8±0.
1
s Features
0.
8max 1.
0±0.
2
1.
0±0.
1
2.
5±0.
1
q High-speed switching q High collector to base voltage VCBO q Wide area of safe operation (ASO)
0.
93±0.
1
0.
1±0.
05 0.
5±0.
1
2.
3±0.
1 4.
6±0.
1
0.
75±0.
1
q Satisfactory linearity of foward current transfer ratio hFE
/ s Absolute Maximum Ratings (TC=25˚C)
1
2
3
1:Base 2:Collector 3:Emitter U Type Package
e ) Parameter
Symbol
Ratings
Unit
c type Collector to base voltage
VCBO
500
V
n d tage.
ued VCES
500
5.
5±0.
2 1.
8
V
s tin Collector to emitter voltag...