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2SC5712

Part Number 2SC5712
Manufacturer Toshiba Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications DC-DC Converter Applications DC-...
Datasheet 2SC5712





Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5712 High-Speed Switching Applications DC-DC Converter Applications DC-AC Converter Applications 2SC5712 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.
3 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.
14 V (max) • High-speed switching: tf = 120 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range VCBO 100 V VCEX 80 V VCEO 50 VEBO 7 V IC 3.
0 A ICP 5.
0 IB 0.
3 A ...






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