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2SC5703

Toshiba Semiconductor
Part Number 2SC5703
Manufacturer Toshiba Semiconductor
Description NPN Transistor
Published Apr 3, 2005
Detailed Description TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Str...
Datasheet PDF File 2SC5703 PDF File

2SC5703
2SC5703

Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5703 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications 2SC5703 Unit: mm • High DC current gain: hFE = 400 to 1000 (IC = 0.
5 A) • Low collector-emitter saturation voltage: VCE (sat) = 0.
12 V (max) • High-speed switching: tf = 55 ns (typ.
) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Collector current DC Pulse Base current Collector power dissipation DC t = 10 s Junction temperature Storage temperature range VCBO 100 V VCEX 80 V VCEO 50 V VEBO 7 V IC 4 A ICP 7 IB 400 mA PC 800 mW (Note 1) 1250 Tj 150 °C Tstg −55 to 150 °C JEDEC ― JEITA ― TOSHIBA 2-3S1C Weight: 0.
01 g (typ.
) Note 1: Mounted on an FR4 board (glass epoxy, 1.
6 mm thick, Cu area: 645 mm2) Note 2: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 2000-05 1 2016-09-27 Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Symbol Test Condition ICBO IEBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) Cob tr tstg tf VCB = 100 V, IE ...


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