Transistor
2SD1051
Silicon
NPN epitaxial planer type
For low-frequency power amplification Complementary to 2SB819
6.
9±0.
1 1.
5 2.
5±0.
1 1.
0
1.
0 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1
Unit: mm
s Features
q q q
1.
5 R0.
9 R0.
9
0.
85
0.
55±0.
1
0.
45±0.
05
1.
25±0.
05
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings 50 40 5 3 1.
5 1 150 –55 ~ +150 1cm2 Unit V V V A A W ˚C ˚C
1:Base 2:Collector 3:Emitter
2.
5 2.
5 3 2 1
Symbol VCBO VCEO VEBO ICP IC PC* Tj Tstg
EIAJ:SC–71 M Type Mold Package
Printed circuit board: Copp...