Transistor
2SD1199
Silicon
NPN epitaxial planer type
For low-frequency amplification
Unit: mm
6.
9±0.
1 1.
5 2.
5±0.
1 1.
0
s Features
q q q q q
1.
5 R0.
9 R0.
9
0.
4
High foward current transfer ratio hFE.
Low collector to emitter saturation voltage VCE(sat).
High emitter to base voltage VEBO.
Low noise voltage NV.
M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board.
2.
4±0.
2 2.
0±0.
2 3.
5±0.
1
1.
0
0.
45±0.
05 1
1.
0±0.
1
R
0.
7
0.
85
0.
55±0.
1
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junct...