Power
Transistors
2SD1611
Silicon
NPN triple diffusion planar type Darlington
For power amplification
10.
0±0.
3 1.
5±0.
1
8.
5±0.
2 6.
0±0.
5 3.
4±0.
3
Unit: mm
1.
0±0.
1
s Features
q q q
1.
5max.
1.
1max.
High foward current transfer ratio hFE High collector to base voltage VCBO N type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
10.
5min.
2.
0
0.
8±0.
1
0.
5max.
2.
54±0.
3 5.
08±0.
5 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperatu...