Power
Transistors
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2SD1640
Silicon
NPN epitaxial planar type darlington
Unit: mm
For low-frequency output amplification
φ 3.
16±0.
1
8.
0+0.
5 –0.
1
3.
2±0.
2
3.
8±0.
3
1.
9±0.
1
• High forward current transfer ratio hFE • Large peak collector current ICP • High collector-emitter voltage (Base open) VCEO
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 100 5 2 3 1.
2 150 −55 to +150 Unit V V V A A W °C °C
B
1...