2SD1662
TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (Darlington power
transistor)
2SD1662
High Current Switching Applications
Unit: mm
· High DC current gain: hFE = 1000 (min) (VCE = 3 V, IC = 15 A) · Low collector saturation voltage: VCE (sat) = 1.
5 V (max) (IC = 15 A) · Monolithic construction with built-in base-emitter shunt resistor.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB
PC
Tj Tstg
Rating 100 100 5 15 1
100
150 −55 to 150
Unit V V V A A
W
°C °C
Equivale...