Power
Transistors
2SD2051
Silicon
NPN epitaxial planar type Darlington
For low-frequency amplification
0.
7±0.
1
10.
0±0.
2 5.
5±0.
2 2.
7±0.
2
4.
2±0.
2
4.
2±0.
2
Unit: mm
7.
5±0.
2
s Features
q q q
4.
0
High foward current transfer ratio hFE Incorporating a built-in zener diode Full-pack package which can be installed to the heat sink with one screw (TC=25˚C)
Ratings 60±10 60±10 5 2.
5 1.
6 12 2.
0 150 –55 to +150 Unit V V V A A W ˚C ˚C
16.
7±0.
3
φ3.
1±0.
1
1.
4±0.
1
1.
3±0.
2
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temper...