Transistor
2SD2067 (Tentative)
Silicon
NPN epitaxial planer type
6.
9±0.
1 1.
05 2.
5±0.
1 ±0.
05
Unit: mm
(1.
45) 0.
8
0.
5 4.
5±0.
1
For low-frequency output amplification
0.
15
0.
7
4.
0
q q q q q
Darlington connection.
High foward current transfer ratio hFE.
Large peak collector current ICP.
High collector to emitter voltage VCEO.
Allowing supply with the radial taping.
0.
45–0.
05
0.
45–0.
05
+0.
1
+0.
1
2.
5±0.
5 1 2
2.
5±0.
5 3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings 120 100 5 3 2 1 150 –55 ...