TOSHIBA
Transistor Silicon
NPN Triple Diffused Type (Darlington)
2SD2079
2SD2079
High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications
Unit: mm
• High DC current gain: hFE (1) = 2000 (min) • Low saturation voltage: VCE (sat) (1) = 1.
5 V (max) • Complementary to 2SB1381.
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
100 100
7 5 8 0.
5 2.
0 30 150 −55 to 150
V V V
A
A
W
°C °C
JEDEC
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