DT451AN
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT
TRANSISTOR Features
· · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance
SOT-223
A B
Dim A B C D E
Min 6.
30 2.
90 6.
71 3.
30 2.
22 0.
92 1.
10 1.
55 0.
025 0.
66 4.
55 — 10° 0.
254 10°
Max 6.
71 3.
10 7.
29 3.
71 2.
35 1.
00 1.
30 1.
80 0.
102 0.
79 4.
70 10° 16° 0.
356 16°
D
C D
G
E
D
S
G H
G
P R S
H J K L M N P R S
J K L M
N
Mechanical Data
· · SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above
25°C unless otherwise specified Symbol VDSS VGSS Continuous Pulsed Note 1a Note 1b Note 1c ID Pd Tj, TSTG Value 30 ±20 ...