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DT451N

Diodes Incorporated
Part Number DT451N
Manufacturer Diodes Incorporated
Description N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Published Apr 3, 2005
Detailed Description DT451N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-St...
Datasheet PDF File DT451N PDF File

DT451N
DT451N

Overview
DT451N N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features · · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SOT-223 Dim A B Min 6.
30 2.
90 6.
71 3.
30 2.
22 0.
92 1.
10 1.
55 0.
025 0.
66 4.
55 — 10° 0.
254 10° Max 6.
71 3.
10 7.
29 3.
71 2.
35 1.
00 1.
30 1.
80 0.
102 0.
79 4.
70 10° 16° 0.
356 16° A B C D E D C D G E J K D S G H G P R S H J K L M N P R S L M N Mechanical Data · · SOT-223 Plastic Case Terminal Connections: See Outline Drawing and Internal Circuit Diagram Above All Dimensions in mm Maximum Ratings Drain-Source Voltage Gate-Source Voltage Drain Current Maximum Power Dissipation 25°C unless otherwise specified Symbol VDSS VGSS Note 1a Continuous Pulsed Note 1a Note 1b Note 1c ID Pd Tj, TSTG Value 30 ±20 ±5.
5 ±25 3.
0 1.
3 1.
1 -65 to +150 Unit V V A W °C Characteristic Operating and Storage Temperature Range Thermal Characteristics Characteristic Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case Note 1 Symbol RQJA RQJC Value 42 12 Unit °C/W °C/W Notes: 1.
RQJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RQJC is guaranteed by design while RQCA is determined by the user’s board design.
1a.
With 1 in2 oz 2 oz.
copper mounting pad RQJA = 42°C/W.
1b.
With 0.
0066 in2 oz 2 oz.
copper mounting pad RQJA = 95°C/W.
1c.
With 0.
0123 in2 oz 2 oz.
copper mounting pad RQJA = 110°C/W.
DS11607 Rev.
C-4 1 of 4 DT451N Electrical Characteristics 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Tj =55°C Gate-Body Leakage, Forward Gate-Body Leakage, Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Tj = 125°C Static Drain-Source On-Resistance RDS (ON) Tj = 125°C On-State Drain Current Forward Transconductance DYNAMIC CHACTERISTICS In...


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