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RF MOSFET 2 - 175 MHz
Features
l l l l l
Power
Transistor,
lOW, 28V
DU2810S
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Low Noise Floor
Absolute Maximum Ratinas at 25°C
( Parameter 1 Drain-SourceVoltage Gate-Source Drain-Source Voltage Current 1 Symbol ) V, V OS ‘0s PO 1 T, T ST0 eJC ) 1 1 Rating 65 20 2.
8 35’ 200 -65to+150 2 1 1 Units I v
V
1 I
A W “C “C “Cl-W 1
Power Dissipation ( JunctionTemperature StorageTemperature Thermal Resistance
Typical Device \mpedance
Frequency (MHz) 30
50
*,, (OHMS)
27.
0 -j 11.
0
24.
0 - j 15.
0
*,onD (OHMS)
23.
0 - j 3.
0 19.
0 - j 5.
0
6.
0 j 9.
0 -j 5.
0 14.
...