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DU28120T

MA-COM
Part Number DU28120T
Manufacturer MA-COM
Description RF Power MOSFET Transistor
Published Aug 21, 2017
Detailed Description DU28120T RF Power MOSFET Transistor 120 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structu...
Datasheet PDF File DU28120T PDF File

DU28120T
DU28120T

Overview
DU28120T RF Power MOSFET Transistor 120 W, 2 - 175 MHz, 28 V Features  N-Channel enhancement mode device  DMOS structure  Lower capacitances for broadband operation  High saturated output power  Lower noise figure than bipolar devices  RoHS Compliant Package Outline Rev.
V1 ABSOLUTE MAXIMUM RATINGS AT 25° C Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Drain-Source Current Power Dissipation Junction Temperature Storage Temperature Thermal Resistance VDS VGS IDS PD TJ TSTG θJC 65 20 24 269 200 -55 to +150 0.
65 Units V V A W °C °C °C/W TYPICAL DEVICE IMPEDANCE F (MHz) ZIN (Ω) ZLOAD (Ω) 30 4.
0 - j8.
0 3.
4 + j2.
4 50 1.
0 - j2.
5 2.
2 +j1.
3 100 1.
0 - j0.
5 2.
2 + j0.
0 VDD = 28V, IDQ = 600mA, POUT = 120 W ZIN is the series equivalent input impedance of the device from gate to source.
ZLOAD is the optimum series equivalent load impedance as measured from drain to ground.
LETTER DIM A B C D E F G H J K L M N MILLIMETERS MIN MAX...


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