RF MOSFET Power
Transistor, 8OW, 28V 2 - 175 MHz
Features
N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices
DU2880U
Absolute Maximum Ratings at 25°C
1U
Speciftcations Subject to Change Without Notice.
M/A-COM, Inc.
North America: Tel.
(800) 366-2266 Fax (800) 618-8883
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Asia/Pacific:
Tel.
+81 (03) 3226-1671 Fax +81 (03) 3226-1451
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Europe:
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+44 (1344) 869 595 Fax +44 (1344) 300 020
RF MOSFET Power
Transistor,
8OW, 28V
DU2880U
v2.
00
Typical Broadband Performance
Curves
EFFICIENCY
I’,,=28
vs FREQUENCY
25
GAIN vs FREQUENCY
V I,,=400 mA P,,,=80 W
.
”
25
50
1...