Part Number
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6AM14 |
Manufacturer
|
Hitachi Semiconductor |
Description
|
Silicon N-Channel/P-Channel Power MOS FET Array |
Published
|
Apr 3, 2005 |
Detailed Description
|
6AM14
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• • • • Low on-r...
|
Datasheet
|
6AM14
|
Overview
6AM14
Silicon N-Channel/P-Channel Power MOS FET Array
Application
High speed power switching
Features
• • • • Low on-resistance Low drive current High speed switching High density mounting
Outline
6AM14
Absolute Maximum Ratings (Ta = 25°C)
Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Reverse drain current Channel dissipation Channel dissipation Channel temperature Storage temperature Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
Value at 6 Drive operation Symbol VDSS VGSS ID ID(pulse)*1 IDR Pch*2 Pch*2 Tch Tstg Nch 60 ±20 7 28 7 42 4.
8 150 –55 to +150 Pch –60 ±20 –7 –28 –7 Unit V V A A A W W °C °C
2
6AM14
Electrical Characteristics N Channel (...
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