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6AM15

Part Number	6AM15
Manufacturer	Hitachi Semiconductor
Description	Silicon N/P Channel MOS FET High Speed Power Switching
Published	Apr 3, 2005
Detailed Description	6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st. Edition February 1999 Features • Low ...
Datasheet	6AM15 PDF File

Overview

6AM15 Silicon N/P Channel MOS FET High Speed Power Switching ADE-208-719 (Z) 1st.
Edition February 1999 Features • Low on-resistance N Channel : RDS(on) = 0.
045 Ω typ.
P Channel : RDS(on) = 0.
085 Ω typ.
High speed switching 4 V gate drive device can be driven from 5 V source High density mounting • • • Outline 6AM15 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Nch Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel dissipation Channel temperature Storage temperature Note: 1.
PW ≤ 10 µs, duty cycle ≤ 1% 2.
6 Devices operation 3.
Value at Ta = 25°C, ...

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