KSB1151
KSB1151
Feature
• Low Collector-Emitter Saturation Voltage • Large Collector Current • High Power Dissipation : PC=1.
3W (Ta=25°C) • Complement to KSD 1691
1
TO-126
1.
Emitter 2.
Collector 3.
Base
PNP Epitaxial Silicon
Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO
Collector-Base Voltage
VCEO
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current (DC)
ICP
*Collector Current (Pulse)
IB
Base Current
PC
Collector Dissipation (Ta=25°C)
Collector Dissipation (TC=25°C)
TJ
Junction Temperature
TSTG
Storage Temperature
* PW≤10ms, Duty Cycle≤50%
Electrical Characteristics TC=25°C unless otherwise noted
Sym...