DatasheetsPDF.com

KSB1151

Part Number	KSB1151
Manufacturer	INCHANGE
Description	PNP Transistor
Published	Sep 9, 2020
Detailed Description	isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dis...
Datasheet	KSB1151 PDF File

Overview

isc Silicon PNP Power Transistor DESCRIPTION ·Large Collector Current ·Low Collector Saturation Voltage ·High Power Dissipation ·Complement to KSD1691 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation.
APPLICATIONS ·Designed for use in DC-DC converter, or driver of solenoid or motor.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -60 V VCEO Collector-Emitter Voltage -60 V VEBO Emitter-Base Voltage -7 V IC Collector Current-Continuous -5 A ICP Collector Current-Pulse -8 A IB Base Current-Continuous Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation @ Ta=25℃ TJ Junction ...

Similar Datasheet

KSB1116 PNP Epitaxial Silicon Transistor - Fairchild Semiconductor
KSB1116 Silicon PNP transistor - BLUE ROCKET ELECTRONICS
KSB1116A PNP Epitaxial Silicon Transistor - Fairchild Semiconductor
KSB1116A Silicon PNP transistor - BLUE ROCKET ELECTRONICS
KSB1116S Audio Frequency Power Amplifier - Fairchild Semiconductor
KSB1121 PNP Epitaxial Planar Silicon Transistor - Fairchild Semiconductor
KSB1149 PNP Silicon Darlington Transistor - Fairchild Semiconductor
KSB1151 PNP Transistor - JCET
KSB1151 PNP Transistor - INCHANGE
KSB1151 PNP Epitaxial Silicon Transistor - Fairchild Semiconductor

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)