KSE800/801/803
NPN EPITAXIAL SILICON DARLINGTON
TRANSISTOR
HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.
5 and 2.
0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS
• Complement to KSE700/701/702/703
TO-126
ABSOLUTE MAXIMUM RATINGS
Characteristic Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO 60 80 VCEO 60 80 5 4 0.
1 40 150 -55 ~ 150 V V V A A W °C °C V V Rating Unit
VEBO IC IB PC TJ T STG
1.
Emitter 2.
Collector 3.
Base
ELECTRICAL CHARACTERISTICS (TC=25°C)
Characteristic Collector Emi...