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KSE802

Fairchild Semiconductor
Part Number KSE802
Manufacturer Fairchild Semiconductor
Description NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR
Published Apr 5, 2005
Detailed Description KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.5 and 2.0A DC MONO...
Datasheet PDF File KSE802 PDF File

KSE802
KSE802

Overview
KSE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 @IC= 1.
5 and 2.
0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS • Complement to KSE700/701/702/703 TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Collector- Base Voltage : KSE800/801 : KSE802/803 Collector-Emitter Voltage : KSE800/801 : KSE802/803 Emitter- Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature Symbol VCBO 60 80 VCEO 60 80 5 4 0.
1 40 150 -55 ~ 150 V V V A A W °C °C V V Rating Unit VEBO IC IB PC TJ T STG 1.
Emitter 2.
Collector 3.
Base ELECTRICAL CHARACTERISTICS (TC=25°C) Characteristic Collector Emi...


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