KSP13/14
KSP13/14
Darlington
Transistor
• Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=625mW
1
TO-92
1.
Emitter 2.
Base 3.
Collector
NPN Epitaxial Silicon Darlington
Transistor
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCES VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 10 500 625 150 -55 ~ 150 Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCES ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter C...