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KSP13

Fairchild Semiconductor
Part Number KSP13
Manufacturer Fairchild Semiconductor
Description Darlington Transistor
Published Apr 5, 2005
Detailed Description KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=6...
Datasheet PDF File KSP13 PDF File

KSP13
KSP13

Overview
KSP13/14 KSP13/14 Darlington Transistor • Collector-Emitter Voltage: VCES=30V • Collector Power Dissipation: PC (max)=625mW 1 TO-92 1.
Emitter 2.
Base 3.
Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted Symbol VCBO VCES VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 30 30 10 500 625 150 -55 ~ 150 Units V V V mA mW °C °C Electrical Characteristics Ta=25°C unless otherwise noted Symbol BVCES ICBO IEBO hFE Parameter Collector-Emitter Breakdown Voltage Collector Cut-off Current Emitter Cut-off Current * DC Current Gain : KSP13 : KSP14 : KSP13 : KSP14 VCE (sat) VBE (on) fT Collector-Emitter Saturation Voltage Base-Emitter On Voltage Current Gain Bandwidth Product VCE=5V, IC=10mA VCE=5V, IC=100mA IC=100mA, IB=0.
1mA VCE=5V, IC=100mA VCE=5V, IC=10mA f=100MHz 125 5K 10K 10K 20K 1.
5 2.
0 ...


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