Part Number
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ISL9N302AP3 |
Manufacturer
|
Fairchild Semiconductor |
Description
|
N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs |
Published
|
Apr 5, 2005 |
Detailed Description
|
ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Descri...
|
Datasheet
|
ISL9N302AP3
|
Overview
ISL9N302AP3
January 2002
ISL9N302AP3
N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs
General Description
This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features
• Fast switching • rDS(ON) = 0.
0019Ω (Typ), VGS = 10V • rDS(ON) = 0.
0027Ω (Typ), VGS = 4.
5V • Qg (Typ) = 110nC, VGS = 5V • Qgd (Typ) = 31nC • CISS (Typ) = 11000pF
Applications
• DC/DC converters
SOURCE DRAIN GATE D
G DRAIN (FLANGE) S
TO-220AB MOSFET Maximum Ratings TA = 25°C un...
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