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ISL9N302AS3ST

Part Number	ISL9N302AS3ST
Manufacturer	Fairchild Semiconductor
Description	N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs
Published	Apr 5, 2005
Detailed Description	ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Desc...
Datasheet	ISL9N302AS3ST PDF File

Overview

ISL9N302AS3ST April 2002 ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs General Description This device employs a new advanced trench MOSFET technology and features low gate charge while maintaining low on-resistance.
Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies.
Features • Fast switching • rDS(ON) = 0.
0019Ω (Typ), VGS = 10V • rDS(ON) = 0.
0027Ω (Typ), VGS = 4.
5V • Qg (Typ) = 110nC, VGS = 5V • Qgd (Typ) = 31nC • CISS (Typ) = 11000pF Applications • DC/DC converters DRAIN (FLANGE) D GATE SOURCE G S TO-263AB MOSFET Maximum Ratings TA = 25°C unless ...

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ISL9N302AS3ST N-Channel Logic Level PWM Optimized UltraFET Trench Power MOSFETs - Fairchild Semiconductor

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