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High Voltage, High Gain
BIMOSFET Monolithic Bipolar MOS
Transistor
TM
IXBH 10N170 IXBT 10N170
VCES = 1700 V IC25 = 20 A VCE(sat) = 3.
8 V
Preliminary Data Sheet
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load TC = 25°C
Maximum Ratings 1700 1700 ±20 ±30 20 10 40 ICM = 20 V CES = 1350 140 -55 .
.
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+150 150 -55 .
.
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+150 300 260 V V V V A A A A V W °C °C °C °C °C
TO-268 (IXBT)
G E (TAB)
TO-247 AD (IXBH)
G
C (TAB) C E C = Collector, TAB = Collector
G = Gate, E = Emitt...