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IXBH10N170

IXYS Corporation
Part Number IXBH10N170
Manufacturer IXYS Corporation
Description High Voltage/ High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
Published Apr 5, 2005
Detailed Description www.DataSheet4U.com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCE...
Datasheet PDF File IXBH10N170 PDF File

IXBH10N170
IXBH10N170

Overview
www.
DataSheet4U.
com High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor TM IXBH 10N170 IXBT 10N170 VCES = 1700 V IC25 = 20 A VCE(sat) = 3.
8 V Preliminary Data Sheet Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) PC TJ TJM Tstg Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C; RGE = 1 MΩ Continuous Transient TC = 25°C TC = 90°C TC = 25°C, 1 ms VGE = 15 V, TVJ = 125°C, RG = 33 Ω Clamped inductive load TC = 25°C Maximum Ratings 1700 1700 ±20 ±30 20 10 40 ICM = 20 V CES = 1350 140 -55 .
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+150 150 -55 .
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+150 300 260 V V V V A A A A V W °C °C °C °C °C TO-268 (IXBT) G E (TAB) TO-247 AD (IXBH) G C (TAB) C E C = Collector, TAB = Collector G = Gate, E = Emitt...


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