Part Number
|
IXTT11P50 |
Manufacturer
|
IXYS Corporation |
Description
|
P-Channel MOSFET |
Published
|
Apr 5, 2005 |
Detailed Description
|
Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTH11P50 IXTT11P50
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EA...
|
Datasheet
|
IXTT11P50
|
Overview
Power MOSFETs
P-Channel Enhancement Mode Avalanche Rated
IXTH11P50 IXTT11P50
Symbol
VDSS VDGR
VGSS VGSM
ID25 IDM
IA EAS
PD
TJ TJM Tstg
TL Tsold
Md
Weight
Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C
1.
6mm (0.
062in.
) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247
Maximum Ratings
- 500
V
- 500
V
±20
V
±30
V
- 11
A
- 44
A
- 11
A
1
J
300
W
- 55 .
.
.
+150
°C
150
°C
- 55 .
.
.
+150
°C
300
°C
260
°C
1.
13 / 10
Nm/lb.
in.
4
g
6
g
Symbol
Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVDSS
VGS = 0V, I...
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