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IXTT11P50

IXYS Corporation
Part Number IXTT11P50
Manufacturer IXYS Corporation
Description P-Channel MOSFET
Published Apr 5, 2005
Detailed Description Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTH11P50 IXTT11P50 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EA...
Datasheet PDF File IXTT11P50 PDF File

IXTT11P50
IXTT11P50

Overview
Power MOSFETs P-Channel Enhancement Mode Avalanche Rated IXTH11P50 IXTT11P50 Symbol VDSS VDGR VGSS VGSM ID25 IDM IA EAS PD TJ TJM Tstg TL Tsold Md Weight Test Conditions TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1MΩ Continuous Transient TC = 25°C TC = 25°C, Pulse Width Limited by TJM TC = 25°C TC = 25°C TC = 25°C 1.
6mm (0.
062in.
) from Case for 10s Plastic Body for 10 seconds Mounting Torque (TO-247) TO-268 TO-247 Maximum Ratings - 500 V - 500 V ±20 V ±30 V - 11 A - 44 A - 11 A 1 J 300 W - 55 .
.
.
+150 °C 150 °C - 55 .
.
.
+150 °C 300 °C 260 °C 1.
13 / 10 Nm/lb.
in.
4 g 6 g Symbol Test Conditions (TJ = 25°C Unless Otherwise Specified) BVDSS VGS = 0V, I...


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