Part Number
|
JDV2S10T |
Manufacturer
|
Toshiba Semiconductor |
Description
|
VCO for UHF Band Radio |
Published
|
Apr 7, 2005 |
Detailed Description
|
JDV2S10T
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S10T
VCO for UHF Band Radio
· · · High capacitance ratio: C0.5...
|
Datasheet
|
JDV2S10T
|
Overview
JDV2S10T
TOSHIBA Diode Silicon Epitaxial Planar Type
JDV2S10T
VCO for UHF Band Radio
· · · High capacitance ratio: C0.
5 V/C2.
5 V = 2.
5 (typ.
) Low series resistance: rs = 0.
35 Ω (typ.
) Useful for small size tuner.
Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C
JEDEC JEITA TOSHIBA
― ― 1-1H1A
Electrical Characteristics (Ta = 25°C)
Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol VR IR C0.
5 V C2.
5 V C0.
5 V/C2.
5 V rs I R = 1 mA VR = 10 V VR = 0.
5 V, f = 1 MHz VR = 2.
5 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Te...
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