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JDV2S10T

Part Number JDV2S10T
Manufacturer Toshiba Semiconductor
Description VCO for UHF Band Radio
Published Apr 7, 2005
Detailed Description JDV2S10T TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S10T VCO for UHF Band Radio · · · High capacitance ratio: C0.5...
Datasheet JDV2S10T




Overview
JDV2S10T TOSHIBA Diode Silicon Epitaxial Planar Type JDV2S10T VCO for UHF Band Radio · · · High capacitance ratio: C0.
5 V/C2.
5 V = 2.
5 (typ.
) Low series resistance: rs = 0.
35 Ω (typ.
) Useful for small size tuner.
Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 125 -55~125 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1H1A Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance Capacitance ratio Series resistance Symbol VR IR C0.
5 V C2.
5 V C0.
5 V/C2.
5 V rs I R = 1 mA VR = 10 V VR = 0.
5 V, f = 1 MHz VR = 2.
5 V, f = 1 MHz ¾ VR = 1 V, f = 470 MHz Te...






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