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JDV2S17S

Toshiba
Part Number JDV2S17S
Manufacturer Toshiba
Description VCO
Published Nov 11, 2013
Detailed Description JDV2S17S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio • • • High Capacitance Ratio : C1V...
Datasheet PDF File JDV2S17S PDF File

JDV2S17S
JDV2S17S

Overview
JDV2S17S TOSHIBA DIODE Silicon Epitaxial Planar Type JDV2S17S VCO for UHF Band Radio • • • High Capacitance Ratio : C1V/C4V = 2.
1 (typ.
) Low Series Resistance : rs = 0.
6 Ω (typ.
) This device is suitable for use in a small-size tuner.
Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Reverse voltage Junction temperature Storage temperature range Symbol VR Tj Tstg Rating 10 150 −55~150 Unit V °C °C JEDEC JEITA TOSHIBA ― ― 1-1K1A Weight: 0.
0011 g (typ.
) Electrical Characteristics (Ta = 25°C) Characteristics Reverse voltage Reverse current Capacitance Capacitance ratio Series resistance Symbol VR IR C1V C4V C1V/C4V rs IR = 1 µA VR = 10 V VR = 1 V, f = 1 MHz VR = 4 V, f = 1 MHz ⎯ VR = 1 ...


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